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| TRANSISTOR MODULE Hi- SQD400BA60 UL;E76102 M SQD400BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 400A, VCEX 600V Low saturation voltage for higher efficiency. ULITRA HIGH DC current gain hFE. hFE 750 Isolated mounting base IVEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol VCBO VCEX VEBO IC IC IB PT Tj Tstg VISO Item Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Reverse Collector Current Base Current Total power dissipation Junction Temperature Storage Temperature Isolation Voltage Mounting Torque Mass Mounting M6 Terminal M6 Terminal M4 A.C.1minute Recommended Value 43kgf B Recommended Value 43kgf B Recommended Value 12.5kgf B Typical Value TC 25 40 =pw 1ms VBE 2V Conditions Ratings SQD400BA60 600 600 10 400 800 400 24 1500 150 40 125 2500 4.7 (48) 4.7 (48) 1.5 (15) 460 Tj 25 Unit V V V A A A W V Nm ( f B) g Tj 25 Electrical Characteristics Symbol ICBO IEBO VCEO SUS VCEX SUS hFE VCE VBE sat sat Item Collector Cut-off Current Emitter Cut-off Current Collector Emitter Sustaning Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Reverse Recovery time Thermal Impedance (junction to case) VCB VCBO VEB VEBO Ic 1A Ic 80A IB2 Conditions Ratings Min. Typ. Max. 4.0 1600 450 Unit mA mA V 8A 600 750 2.5 3.0 2.0 8.0 2.0 1.8 5V 200 0.083 0.25 Ic 400A VCE 2.5V Ic 400A IB 530mA Ic 400A IB 530mA Vcc 300V Ic 400A 8A IB1 0.8A IB2 Ic 400A Vcc 300V, Ic 400A, di/dt 300A/ s, VBE Transistor part Diode part V V s V ns /W ton ts tf VECO trr Rth j-c 57 SQD400BA60 58 |
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